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inchange semiconductor product specification silicon npn power transistors 2SC3423 description ? ? with to-126 package ? complement to type 2sa1360 ? high transition frequency applications ? audio frequency amp lifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current 50 ma i b base current 5 ma t a =25 ?? 1.2 p d total power dissipation t c =25 ?? 5 w t j junction temperature 150 ?? t stg storage temperature -55 ?? +150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SC3423 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ;i b =0 150 v v cesat collector-emitter saturation voltage i c =10ma; i b =1ma 1.0 v v be base-emitter on voltage i c =10ma ; v ce =5v 0.8 v i cbo collector cut-off current v cb =150v; i e =0 0.1 | a i ebo emitter cut-off current v eb =5v; i c =0 0.1 | a h fe dc current gain i c =10ma ; v ce =5v 80 240 c ob output capacitance i e =0 ; v cb =10v f=1mhz 1.8 pf f t transition frequency i c =10ma ; v ce =5v 200 mhz ? h fe classifications o y 80-160 120-240
inchange semiconductor product specification 3 silicon npn power transistors 2SC3423 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SC3423

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